Abstract
A significant drop (by a factor of 10,000) in the electrical resistance of the thin-film semiconductor MoS2 with continuous injection of protons into it under conditions of established dynamic equilibrium was found. With the cessation of proton injection, the effect disappears. These films MoS2 were obtained on polished glass supports by means of mechanical infriction of powder into a rough surface. In order to create a permanent proton flow directed to the sample plasma ion source with cold cathode was used.
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