Abstract
Layers of ZnSe and ZnCdxSe (x ~ 0.32-0.35) grown on GaAs (001) substrates by molecular beam epitaxy method were investigated. The electron beam impact on changes in crystal structure of specimens under examination and on their luminescent properties was studied. Methods of cathode luminescence, transmission electron microscopy, and electron microprobe analysis were applied. It is found that irradiation of specimens in the transmission electron microscope results in stacking faults annealing accompanied by formation of ZnO precipitates with hexagonal crystal structure. Irradiation of specimens in the cathode luminescence plant results in decreased intensity of cathode luminescence layers of ZnSe and ZnCdxSe in question due to radiation-stimulated degradation processes. Key words: point defects, irradiation by electron beam, cathode luminescence, structural changes.
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