Abstract
New kinetic data show clear differences between the kinetics and mechanism of plasma induced deposition of a- and μc-Si:H on one hand and a- and μc-Ge:H on the other hand. Because of the lower reactivity of germane as compared to silane, a higher plasma density is needed in order to achieve comparable reaction rates. The deposition of a-Si proceeds via higher silanes but GeH X species dominate the deposition of a- and μc-Ge. Further differences between these two systems are found regarding the amorphous-to-crystalline transition.
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