Abstract
Nanocrystalline semiconductor thin films of TiO2, CdS and CdTe were prepared by various techniques. TiO2 thin films of controlled thickness and optimized electrical properties were prepared by Langmuir Blodgette (LB) technique. CdTe nanoparticles were prepared by hydrothermal technique whereas CdS nanoparticles were prepared by solvothermal technique. Structural, optical and electrical characterizations of TiO2 thin films, CdS and CdTe nanoparticles were carried out. UV–Visible absorption studies indicated that particle size of CdTe was varying with refluxing time. X-ray diffraction studies indicated the CdS particle of size about 2.4 nm with single phase cubic structure and CdTe particles of size 3 nm with crystal phase zinc blende structure. Photosensitivity studies were carried out on Si/TiO2/CdS/CdTe multilayer structure using two different electrolytes (Na2SO4 and mixture of Na2S:Na2SO3) in photoelectrochemical cell (PEC) configuration. Two electrolytes were used to study the PEC effect on photovoltaic properties. The study showed higher photocurrent with Na2S:Na2SO3 electrolyte.
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