Abstract
In this paper we investigated In2S3 as substitute for CdS, which is conventionally used as buffer layer in chalcopyrite based solar cells. In2S3 thin films were deposited by CBD and co-evaporation methods and these were employed as buffer layer in CuGaSe2 based solar cells. Previous to the device fabrication, comparative study was carried out on In2S3 thin films properties deposited from chemical bath containing thioacetamide, Indium Chloride, and sodium citrate, and In2S3 thin films prepared by co-evaporation from its constituents elements. The influence of synthesis conditions on the growth rate, optical, structural and morphological properties of the as-grown In2S3 thin films have been carried out with Spectrophotometry, X-ray diffraction and AFM microscopy techniques. Suitable conditions were found for reproducible and good quality In2S3 thin films synthesis. By depositing In2S3 thin films as buffer layers in CuGaSe2 configuration, a maximum solar cell efficiency of 6% was achieved, whilst the reference solar cell with CdS/CuGaSe2 on similar absorber exhibited 7% efficiency.
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