Abstract
Abstract The properties of piezoresistive tantalum nitride thin films on silicon substrates have been investigated for use in a pressure-sensing element. The thin-film deposition has been carried out by reactive sputtering techniques under d.c. and r.f. power conditions. An r.f. reactive sputtered tantalum nitride thin film in an Ar-9%N2 deposition atmosphere has been selected as the ideal piezoresistive material for the strain gauge. This piezoresistive strain gauge combines a high resistivity, ϱ = 230 μΩ cm, a low temperature coefficient of resistance, TCR= − 80 ppm/°C and a high temporal stability with a good longitudinal gauge factor, GF = 3.5.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
