Abstract
II-VI group quaternary semiconductor alloy thin films of cadmium zinc sulfoselenide (CdZnSSe) were prepared by chemical bath deposition technique on glass substrates. The deposition was carried out with various optimized deposition parameters such as concentration of precursor ions, deposition temperature, time, pH, etc. In order to obtain homogeneous thin films, triethanolamine (TEA) was used as complexing agent. A common cationic surfactant, cetyl-trimethylammoniumbromide (CTAB) was used as a capping agent. The as-deposited thin films were annealed at different temperatures (i.e. 100°, 300° and 500°C) and their structural and optical properties have been investigated by XRD, SEM, EDS and UV- visible optical absorption studies. The optical band gap energy was found to decrease from 2.21 to 2.01 eV, with increase in annealing temperature exhibiting a red shift.
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