Abstract
We propose Sb-doped TiO2 as electron acceptor material for depleted CdTe nanocrystal (NC) hetero-junction solar cells. Novel devices with the architecture of FTO/ZnO/Sb:TiO2/CdTe/Au based on CdTe NC and TiO2 precursor are fabricated by rational ambient solution process. By introducing TiO2 with dopant concentration, we are able to tailor the optoelectronic properties of NC solar cells. Our novel devices demonstrate a very high open circuit voltage of 0.74 V, which is the highest Voc reported for any CdTe NC based solar cells. The power conversion efficiency (PCE) of solar cells increases with the increase of Sb-doped content from 1% to 3%, then decreases almost linearly with further increase of Sb content due to the recombination effect. The champion device shows Jsc, Voc, FF, and PCE of 14.65 mA/cm2, 0.70 V, 34.44, and 3.53% respectively, which is prospective for solution processed NC solar cells with high Voc.
Highlights
Nanocrystal (NC) solar cells have received extensive attention in the last several years due to their many advantages—such as low cost, environmental friendliness, solution process, simple device technics, and compatible roll-to-roll manufacturing [1,2,3,4,5,6,7,8]
The working principle of efficient CdTe NC solar cells is based on the p-n heterojunction that contains two media: an electron donor and electron acceptor
Efforts try to duplicate this device with an inverted structure of ITO/ZnO/CdTe/Au failed due to the poor junction quality in the ZnO–CdTe interface, which had been confirmed in our previous work [23]
Summary
Nanocrystal (NC) solar cells have received extensive attention in the last several years due to their many advantages—such as low cost, environmental friendliness, solution process, simple device technics, and compatible roll-to-roll manufacturing [1,2,3,4,5,6,7,8]. Solution processed CdTe NC based solar cells with inverted structure of ITO/CdSe/CdTe/Au were reported for the first time by Towsend et al [19]. With Cr/Au as hole collecting electrode, the Voc of devices with the structure of ITO/CdSe/CdTe/Cr/Au can be further increased to 0.62 V [20].
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