Abstract
AlN films were deposited on silicon substrates at low temperatures (300–500 °C) by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD) using trimethylaluminum, N 2 and H 2 gases. The degree of c-axis orientation, crystallinity, functional groups and chemical composition of the films were investigated for various deposition conditions. The degree of c-axis orientation depends on the substrate surface condition and it improves with increasing substrate temperature as well as with increasing microwave power. A c-axis oriented ( σ = 4.3°) AlN film was prepared at 500°C. The importance of the system design which allows the precursor to be dissociated efficiently by the ECR plasma is discussed.
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