Abstract
Doping quartz by ion implantation can be an efficient route to achieve a high luminescence output. In our recent studies on cathodoluminescence (CL) after Ge-, Ba- and alkali-ion implantation in crystalline α-quartz, a number of intrinsic and ion-specific CL bands have been observed and associated with specific defects in the amorphous silica or recrystallized quartz matrix. Ion-specific bands whose properties are correlated with the implanted ion species have been studied in their thermal behaviour under the conditions of dynamic, chemical or laser epitaxy. In this review article, we discuss mainly properties of the strong blue–violet CL emission band at 3.25 eV, which occurs after group-IV (Si, Ge, Sn) and alkali-ion implantation and could not unambiguously explained so far. Arguments are presented for its neutral-oxygen-vacancy structure.
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