Abstract
AbstractA dual‐wavelength LED sample with novel sandwiched structure in high‐In‐content MQWs is studied by temperature dependent photoluminescence (TDPL) and the abnormal temperature dependence of emission intensity is obtained. The novel MQWs structure which contains staggered quantum wells and an ultra‐thin InN interlayer in the wells shows better luminescence property than the reference sample which has conventional quantum wells. Under 325 nm continuous wave laser excitation the LED sample of novel structure exhibits unexpected increasing luminescence intensity as temperature goes up from 140 K to 220 K and reaches its maximum at 220 K. This could be attributed to (1) the carrier redistribution and the novel sandwiched MQWs' high carrier trapping capability; (2) the intrinsic emission property of the MQWs enhanced by improvement of electron‐hole overlap and reduction of quantum confined Stark effect (QCSE) and compositional fluctuation. TDPL under 405 nm laser excitation is also measured to support this view. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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