Carrier Transport Properties of the Field Effect Transistors with Graphene Channel Prepared by Chemical Vapor Deposition

Abstract

We investigate the carrier transport properties of multilayer graphene with a turbostratic structure grown by chemical vapor deposition (CVD). The observed sheet resistivity of field effect transistors using the grown multilayer graphene (GG-FETs) with a turbostratic structure as a channel is almost constant at any temperature. The feature is virtually identical to that of FET using monolayer graphene rather than to that of FET using mechanically exfoliated multilayer graphene with well-ordered stacking. This indicates that the electronic band of the grown multilayer graphene with a turbostratic structure has a linear dispersion around the Dirac point similarity to that of a monolayer graphene. The mobility of the GG-FETs is low (300–400 cm2 V-1 s-1) in comparison with that of the FETs using mechanically exfoliated graphene. From structural analysis using Raman spectroscopy, we find that the low carrier mobility can be explained by the existence of a charged impurity at the grown graphene layers.