Abstract
The carrier transport mechanism of a low resistance Ti/Al Ohmic contact to (112̄2) semipolar n-type GaN grown on m-plane sapphire substrate was investigated. Thermal annealing led to an excellent Ohmic contact with a specific contact resistance of 3.2 ×10-4 Ω cm2. Current–voltage–temperature measurements revealed insignificant changes in the specific contact resistance with respect to temperature, which is evidence of a tunneling transport. Based on the thermionic field emission model, a very low Schottky barrier height of 3 meV and barrier width of 1 nm were obtained due to increased interfacial carriers of 9.2 ×1018 cm-3, resulting in excellent Ohmic contact to semipolar n-type GaN.
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