Carrier capture cross sections of deep gap states at the interfacial grain boundary in a (110)∕(100) bonded silicon wafer

Abstract

This letter examines hole emission processes at a (110)∕(100) grain boundary in a hybrid orientation direct-silicon-bonded p-type Si wafer. The near surface boundary position permits easy control of the charge density at the grain boundary via an applied reverse bias and simultaneous monitoring of the hole emission rate by the leakage current. It was found that, for states below the middle bandgap, those close to the valance band edge have relatively smaller hole capture cross sections than those at higher energy position, and electron capture cross sections are at least two or three orders larger than the corresponding hole capture cross sections.