Carbon–titanium nanostructures: synthesis and characterization

Abstract

C–Ti multilayer nanostructures were deposed by thermionic vacuum arc technology. The layers consisting of about 100 nm Carbon base layer and seven 40 nm alternatively Ti and C layers were deposed on Silicon substrates. On the other hand, in order to obtain C–Ti multilayer structures with variable thickness and different percentages in C and Ti of layers, a 20 nm thick C layer was first deposed on Si substrate and then seven Ti–C layers, each of these having thickness of up to 40 nm were deposed. To perform the successively layers with various thickness were changed the discharge parameters for C and Ti plasma sources to obtain the desirable thickness. By changing of substrate temperature between room temperature and 300 °C and on the other hand the bias voltage up to −700 V, different batches of samples were obtained for this study. To characterize properties of as prepared C–Ti multilayer structures were used electron microscopy techniques (TEM, STEM), Raman spectroscopy, RBS techniques and tribological measurements. To characterize the electrical conductive properties, the electrical surface resistance versus temperature have been measured, and then the electrical conductivity. Using the Wiedemann–Frantz law was calculated the thermal conductivity.