Abstract
The capture and recombination processes for acceptor bound excitons (BEs) have been studied for GaAs/AlGaAs multiple quantum well structures, by varying the barrier thickness for a constant 100 Å well width. The observed decay time for the acceptor BE increases rapidly with decreasing barrier width, and is determined by the relative confinement of the electron and hole wave functions. The capture rate of free excitons to the BE state of the neutral acceptor increases by about a factor 7 from a two-dimensional to a three-dimensionlike system.
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