Abstract
On an upper plane of a silicon substrate (32), a vibrating electrode plate (112) is formed through an insulating film (35). On the vibrating electrode plate (112), a counter electrode plate (113) is arranged through an insulating film, and an acoustic hole (40) penetrates the counter electrode plate (113). On the vibrating electrode plate (112) and the counter electrode plate (113), semi-elliptical holes (36, 104) are opened to vertically face each other. On the upper plane of the silicon substrate (32), a recessed part (37) having a truncated pyramid shape is formed by etching through the etching holes (36, 104). The vibrating electrode plate (112) is held to the silicon substrate (32) by a holding part (117) between the etching holes (36).
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