Abstract
Presently, a nanometer scale capacitance–voltage (C–V) method for the quantitative measurement of the lateral dopant distribution near a semiconductor surface is being established. An atomic force microscope is used to position a nanometer scale tip at a semiconductor surface, and local C–V measurements are performed. Experimental C–V curves have been performed with tips of sub-50 nm radius on a series of silicon wafers of known dopant density. It is shown that repeatable C–V measurements can be performed with nanometer scale tips, and that the capacitance change from accumulation to depletion varies monotonically with local dopant density. The C–V measurements are compared with the theoretical predictions of a simple analytical model. The experimental measurements will be described and the results will be discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.