Abstract
The frequency dependence of the capacitance of a-SiH x Schottky barrier solar cells, in the frequency range 1–10 5 Hz, is interpreted in terms of a simple model based on the spatial variation of the resistivity in the junction region. This interpretation is found to be consistent with the dependence of the capacitance on temperature, illumination and bias. From the capacitance measurements, we are able to derive the potential profile in the space charge region and the density of states in the gap.
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