Abstract
We present a physics-based model of charge density and capacitance for III–V channel double-gate nMOSFETs. The developed model accurately accounts for the impact of quantum capacitance on gate capacitance with applied gate voltage including the steplike behavior with sub-band population. The presented model is in excellent agreement with the self-consistent Schrodinger–Poisson simulation data of InGaAs channel double-gate MOSFET.
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