Abstract
Paramagnetic singly ionized oxygen vacancies Vo and chemisorbed Sn4+-O 2 − species were detected by electron paramagnetic resonance measurements on SnO2 and transition metal (Pt, Ru)-doped SnO2 thin film that had been reduced with CO at different temperatures and then brought into contact with oxygen. The amounts of the two paramagnetic species were evaluated and are discussed as a function of the film annealing temperature in air, the reduction temperature under CO, and the type and concentration of the doping transition element. Also the structural properties of the film were identified through glancing incidence X-ray diffraction analysis. Measurements of the electrical sensitivityS(S=R air/R CO, whereR air andR CO are the resistance under air and under CO(800 ppm)/air respectively) show that the trend of the sensitivity values vs. the reduction temperature with CO could be predicted by the parallel trend of the number of Sn4+−O 2 − centers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
