Abstract
We discuss the importance of resist loss in resist calibration under multi-patterns and put it into resist calibration flow. The work is based on the exposure-focus data matrix which includes a mass of CD values obtained by experiments with step-variation setting of exposure and focus in ArF lithography. We focus on the Root-Mean-Square-Error (RMSE) between experiments and simulations for calibration. The model after calibration with only CD values including could predict that the RMS is low to 2nm for single pattern, and to 5nm for several pattern. However, the cross section image predicted by the aforementioned model is not correspond with the experiment scan imagery. The resist loss adding to flow could improve that and increase the model predictability. Most importantly, it will be shown that calibrated resist models based on several patterns data could predict the resist profile of the other patterns.
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