Abstract
A model for electron field injection from the n-silicon conduction band (CB) into the nitrogen– diamond CB is presented. The model takes into account the electric field penetration into the silicon base and the disturbance of the electron distribution therein. Allowing for a nonlinear anode voltage dependence of the field in the diamond film (and thus in vacuum too) a good fit to experimental current density–voltage (J–V) characteristics was obtained. The model can also predict the temperature dependence of the emission current in accordance with some existing experimental data.
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