Abstract
The Auger lifetime in nondegenerate p-type Hg1−xCdxTe is calculated as a function of composition, temperature, and hole density in the limit of small modulation. Two Auger recombination mechanisms are considered: the classic two-band mechanism involving electron-electron collisions and a three-band mechanism with hole-hole collisions. The calculation is based on an unambiguous set of overlap integral coefficients which appear in the intrinsic lifetime expressions. The results show that the intrinsic lifetimes for the two mechanisms are the same order of magnitude over a wide range of composition and temperature. Predicted Auger and radiative lifetimes are compared, and for 8–14-mm photodetectors based on ideal (defect-free), nondegenerate Hg1-xCdxTe, Auger recombination is the lifetime-limiting mechanism for operating temperatures below 200 K and carrier concentrations greater than 1016 cm−3.
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