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Abstract
AbstractA new approach to the interband tunneling in semiconductor junctions is developed. It generalizes the traditional WKB and EMA theories, which fail in the limits of strong fields and inhomogeneous fields, respectively. The given expression for the energetic tunneling rate remains valid in both limits. In the strong field case it tends to the parabolic band EMA result, whereas for low fields with medium inhomogeneity any band structure model is possible. A Kane model is used to calculate tunneling and total I–U‐characteristics for narrow gap diodes. The breakdown behaviour yields information about the electrically active doping profile.
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