Abstract
The energy levels calculation of electrons confined in small three-dimensional (3D) coupled quantum In x Ga 1-x As dots embedded in GaAs semiconductor matrix is presented. The quantum dots have disk shapes and are separated (in the disk symmetry axis direction) by a certain distance. Based on the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, a finite height hard-wall 3D confinement potential, and the Ben Daniel-Duke boundary conditions, the problem is formulated and solved for the disk-shaped coupled quantum dots. To calculate the ground and induced state energy levels, the nonlinear 3D Schrodinger equation (SE) is solved with a developed nonlinear iterative method to obtain the final self-consistent solutions. In the iteration loops, the Schrodinger equation is discretized with a nonuniform mesh finite difference method, and the matrix eigenvalue problem is solved with the balanced and shifted QR method. Our complete 3D approach demonstrates a principal possibility that the number of bound electronic states in the system can be changed when the interdot (vertical) distance is modified. However, it is impossible to produce an additional possibility to manipulate the system electronic properties within only a two-dimensional (2D) simulation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.