Abstract
Current density and quantum efficiency of p-n junction GaAs solar cell is analytically investigated incorporating the effect of excess carriers due to photon incidence. Carrier transport equations for both types of carriers are solved involving both the conduction mechanisms along with generation rate. Change of dark current is reported in presence of varying operating conditions, and modulation of quantum efficiency is obtained by varying structural parameters. Results are useful for accurate estimation of figure of merit, which will play key role in photovoltaic applications.
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