Abstract
Cadmium selenide films were d.c. sputtered in a mixture of hydrogen selenide and argon. The photoconductive properties of these films, which do not require heat treatment, compare favourably with the best film properties reported in the literature for CdS and CdSe. The higher dark resistivity of about 10 9 ω cm measured through the film compared with about 10 7 ω cm measured in the plane of the film is attributed to the existence of potential barriers due to stacking faults. Illumination from a tungsten light source of approximately 3 mW cm −2 decreased the resistivity to 10 5−10 6ω cm both through and in the plane of the film, and chopping of the light revealed response times of less than 1 ms. The effects of substrate temperature (15–250 °C), film thickness (0.4−4 μ) and other preparation conditions were studied. The films exhibited current saturation at high fields through the film which was ascribed to hole depletion in a region near the anode.
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