Abstract
New and graded/buried lightly doped drain (LDD) structures have been demonstrated, for the first time, to improve significantly the hot-electron reliability of NMOS devices. Both LDD structures have peak doping of the n- spacer implant approximately 1000 A below the Si-SiO 2 interface forming a buried n- spacer near the drain region. In the graded/buried LDD structure the junction of the buried n- spacer is further graded by an additional low-dose phosphorus spacer implant.
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