Abstract
This study presents a comparative theoretical analysis of different doping schemes in organic semiconductor devices. Especially, an in-depth investigation into bulk and contact doping methods is conducted, focusing on their direct impact on the terminal characteristics of field-effect transistors. We use experimental data from a high-performance undoped organic transistor to prepare a base simulation framework and carry out a series of predictive simulations with various position- and density-dependent doping conditions. Bulk doping is shown to offer an overall effective current modulation, while contact doping proves to be rather useful to overcome high-barrier contacts. We additionally demonstrate the concept of selective channel doping as an alternative and establish a critical understanding of device performances associated with the key electrostatic features dictated by interfaces and applied voltages.
Highlights
The vastly different doping methods, ranging from chemical solution mixing to physical diffusion doping, as well as various possible focus zones inside an organic field-effect transistor (OFET) device structure, are among the major complications. We address this difficult but important issue of OFET doping by drawing systematical theoretical comparisons between several doping motifs relevant to state-of-theart OFET devices
We have investigated the bulk, contact, and channel doping concepts for OFETs
The use of physically based, finite-element simulation was key to unveiling the essential features of doped OFETs toward practical applications
Summary
Citation: Kim, C.-H. Bulk versusContact Doping in OrganicSemiconductors. Micromachines 2021, 12, 742. https://doi.org/10.3390/ mi12070742Academic Editor: Joohoon KangReceived: 31 May 2021Accepted: 21 June 2021Published: 24 June 2021Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations.Licensee MDPI, Basel, Switzerland.Attribution (CC BY) license (https://
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