Abstract
The voltage dependent Maxwell-Wagner (MW) type interfacial carrier relaxation process in a fullerene(C60)/polyimide double-layer device was studied by using time-resolved second harmonic generation technique (TR-SHG). The charging of the electrodes, carrier transport, interfacial charge accumulation, and relaxation processes were revealed individually by TR-SHG and analyzed on the basis of the MW model. However, it was found that the interfacial carrier relaxation process followed a stretched exponential law and had a higher order dependence on the applied voltage, which cannot be explained by the simple MW model and were attributed to the bulk traps distributed in the fullerene layer. By taking into account the effects of bulk traps, a bulk-trap modulated MW model was proposed. This model indicates that the interfacial carrier relaxation time (τMW) is not only voltage dependent, but also time dependent, especially within the time region comparable to the characteristic relaxation time of the bulk traps (τt). It is suggested that the two-variable dependent τMW(Vex,t) is responsible for the observed experiment results.
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