Abstract
Accurate second-harmonic generation (SHG) measurements in reflection on native-oxide-covered porous silicon samples and on (1 0 0) p-type doped crystalline silicon wafers have been performed. Non-linear reflection coefficients of both materials have been measured as a function of the azimuthal angle around the direction normal to the surface. An absolute calibration has been performed to allow a quantitative analysis of second-harmonic efficiencies. Following the theory of SHG in reflection in centrosymmetric media, surface and bulk terms of χ (2) have been estimated for the crystalline and nano-crystalline materials; linear optical constants of porous Si have been independently determined by spectroscopic ellipsometry. χ (2) of porous Si is found to be more than two orders of magnitude smaller than in crystalline Si.
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