Abstract
Mobile applications are becoming increasingly feature-rich and powerful, but also dependent on large main memories, which consume a large portion of system energy, especially for devices equipped with 4/6 GB DRAM. Swapping inactive DRAM pages to byte-addressable, non-volatile memory (NVRAM) is a promising solution to this problem. However, most NVRAMs have limited write endurance and the current victim pages selecting algorithm does not aware it. Therefore, to make it practical, the design of an NVRAM based swapping system must also consider endurance. In this paper, we target at prolonging the lifetime of NVRAM based swap area in mobile devices by reducing the write activities to NVRAM based swap area. Different from traditional wisdom, such as wear leveling and hot/cold data identification, we propose to build a system called n Code, which exploits the fact that code pages are easy to identify, read-only, and therefore a perfect candidate for swapping. Utilizing NVRAM’s byte-addressability, we support execute-in-place (XIP) of the code pages in the swap area, without copying them back to DRAM based main memory. Experimental results based on the Google Nexus 5 smartphone show that n Code can effectively prolong the lifetime of NVRAM under various workloads.
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