Abstract
Buckled SiGe films on viscous oxide with different Ge content are studied by wafer bonding and smart-cut process. Compressively strained SiGe layers on the viscous oxide were relaxed to form the buckled state after thermal treatment. Two-dimensional buckling on blanket films is observed. A higher Ge concentration results in a smaller buckling amplitude and a smaller buckling period. Both buckling amplitude and period increase as oxidation time is increased. A small SiGe film (mesa) area can inhibit buckling. Semiempirical analysis gives the critical area size, below which no buckling is observed in the equilibrium states. The critical area size decreases with increasing Ge concentration and decreasing thickness of SiGe films.
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