Abstract
CdSe is a direct band gap semiconductor belonging to the II–VI group and possessing excellent optoelectronic properties. Thin film transistors and image intensifier tubes have been fabricated with this material. It is also a very stable photo anode in wet photovoltaic cells. Several physical and chemical techniques are available for the growth of thin films of CdSe [1–5]. Though results on brush plated CdSe films have been reported earlier [6], the films were deposited on room temperature substrates. To our knowledge, this is the first report on CdSe films grown by the brush plating technique on substrates maintained at higher temperatures.
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