Abstract
In this work, novel Cr3+-doped near-infrared phosphors Y3Ga(3-x)ZnAO12 (A = Ge, Si):xCr3+ were synthesized by the solid-phase reaction method. Their crystal structures and luminescence properties were studied. The excitation spectra of Y3Ga(3-x)ZnAO12 (A = Ge, Si):xCr3+ at 453 nm and 632 nm correspond to the Cr3+ spin-allowed d-d transitions 4A2g-4T1g (4 F) and 4A2g-4T2g (4 F), respectively. The near-infrared emission peak observed at 783 nm (FWHM ≈ 130 nm) is induced by the 4T2g-4A2g transitions of Cr3+. Additionally, the luminescence performance of Y3Ga(3-x)ZnAO12 (A = Ge, Si):xCr3+ phosphors were successfully enhanced by Si4+-Ge4+ ions substitution. The emitting intensities of Y3Ga3ZnGeO12:0.05Cr3+ and Y3Ga3ZnGe0.8Si0.2O12:0.05Cr3+ remain 56 % and 49 % at 423 K of their initial value at 298 K, respectively. The above results indicate that the excitation wavelengths of Y3Ga(3-x)ZnAO12 (A = Ge, Si):xCr3+ phosphors match well with commercial 460 nm blue light chips, suggesting their potential applications in medical imaging, night vision and non-destructive testing.
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