Abstract
The polarization processes in arsenic triselenide (As2Se3) films grown by thermal vacuum deposition and high-frequency ion plasma sputter methods have been studied in alternating electric field at frequencies in a range of 10−2 to 107 Hz and temperatures of 253–343 K. It has been established that the method of preparation significantly influences the dielectric response of samples, which is related to specific features of the localized energy states.
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