Abstract
We theoretically generate broadband cavity soliton, which is known to arise only in a narrowband infrared region. This extension has been done by replacing the conventional semiconductor saturable absorber with a graphene saturable absorber in the microcavity based on a vertical-cavity surface emitting laser coupled with a frequency-selective feedback. The replacement gives rise to cavity solitons in ultraviolet and visible zone, significantly lowers down the required feedback strength as well as the threshold pump power for cavity soliton generation. The spontaneous drift as well as “push broom” dynamics of cavity solitons are observed for all wavelength zones. Since the graphene saturable absorber layer can show broadband operation, it eliminates the necessity of using different saturable absorber layer and their corresponding substrates for different spectral zones. By virtue of graphene's high nonlinearity, single layer structure and easy integration with silicon photonic microresonators our model is a step forward towards the on-chip cavity soliton generator.
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