Broad beam low-energy ion source for ion-beam assisted deposition and material processing

Abstract

The double-anode ion source has been developed for high-current ion-beam application. Ion generating process results in a circulating of electron current in crossing E×H fields in the annular acceleration region. Volt–ampere and discharge characteristics at different configurations of magnetic field directions in the discharge region were investigated. The ion source generates an ion beam, with the energy in the range from 40 to 1000 eV, using rare and active gases. Beam current over 1 A have been obtained at mean ion energies 40–300 eV. This ion source should be useful in the applications where larger currents of low-energy ions are used, especially, for thin film deposition: to increase adhesion, modify stress, increase density or hardness, produce the preferred orientation, and to improve step coverage. It should also be useful for cleaning and etching. Double anode ion source suited for use in a production environment because it is mechanically rugged and reliable. Ion source can operate with filament or the plasma bridge neutralizer.