Bright Light-Emitting Diodes Based on Organometal Halide Perovskite Nanoplatelets.

ABX3 Perovskites for Tandem Solar Cells

The role of Shockley-Read-Hall non-radiative recombination centers on electroluminescence (EL) efficiency in blue multi-quantum-well (MQW) 436 nm GaN/InGaN light emitting diodes (LEDs) was examined by controlled introduction of point defects through 6 MeV electron irradiation. The decrease in the EL efficiency in LEDs subjected to irradiation with fluences above 5 × 1015 cm−2 was closely correlated to the increase in concentration of Ec-0.7 eV electron traps in the active MQW region. This increase in trap density was accompanied by an increase in the both diode series resistance and ideality factor (from 1.4 before irradiation to 2.1 after irradiation), as well as the forward leakage current at low forward voltages that compromise the injection efficiency. Hole traps present in the blue LEDs do not have a significant effect on EL changes with radiation because of their low concentration.

We evaluated the doping effect on the electroluminescence (EL) efficiency of organic light emitting diodes (OLEDs) in which the active layers consist of inorganic-organic hybrid materials fabricated by sol-gel method. The hybrid materials are SiO 2 containing an organic emissive material, whose EL efficeincy was very low due to the large resistance of SiO 2 . Thus, another organic emissive material, Rubrene was doped in the hybrid materials to improve the concentration quenching. As a result, the EL efficiency became about 10 times larger than that without Rubrene-doping. This can be attributed to the energy transfer from the original emissive material to Rubrene.

The influence of the Mg doping profile on the electroluminescence (EL) efficiency of (AlGaIn)N quantum well (QW) light-emitting diodes, grown by low-pressure metal-organic vapor-phase epitaxy on sapphire, has been investigated. The actual Mg profile close to the active region was found to be influenced by segregation as well as by diffusion during growth. In a first experiment, diffusion of the Mg dopants towards the QW region through a not intentionally doped narrow GaN spacer layer, separating the topmost GaInN quantum well from the AlGaN:Mg electron-blocking barrier, was controlled by the growth temperature of the AlGaN:Mg barrier and GaN:Mg contact layer. Starting from low growth temperatures, an increase in Mg concentration close to the active region results in an improved hole injection and thus increased EL efficiency. However, for a too high growth temperature, an excessive spread of the Mg atoms into the active region leads to nonradiative recombination in the QW active region and thus a reduction in EL output. In a second experiment, identical structures were prepared with the Mg-doped (Al)GaN layers grown at lower temperature to minimize Mg diffusion. Instead, the nominal Mg doping level in the GaN spacer layer was varied systematically. Secondary-ion-mass spectrometry revealed that almost identical Mg doping profiles close the QW active region, and in turn very similar EL efficiencies, can be achieved by both approaches when appropriate growth parameters are used.

Conventional annealing processes such as furnace annealing (FA) and rapid thermal annealing (RTA) are compared to the more advanced technique of flash lamp annealing (FLA) regarding the electroluminescence (EL) efficiency, electrical stability, defect formation, and rare-earth nanocluster (RE-nc) creation in metal-oxide-silicon-based light-emitting diodes with Gd implanted layers. We observed strong correlation between the electroluminescence efficiency, the nanocluster size, and the annealing technique for Gd implanted oxides. The increase of the annealing temperature and time leads to an increase of the RE-nc size and decreases the EL efficiency. Therefore, short-pulse high-temperature annealing (FLA) has a large advantage over the different annealing techniques (FA and RTA) from the point of view of stable and efficient metal oxide semiconductor light emitters.

Light-emitting diodes (LEDs), which convert electricity to light, are widely used in modern society-for example, in lighting, flat-panel displays, medical devices and many other situations. Generally, the efficiency of LEDs is limited by nonradiative recombination (whereby charge carriers recombine without releasing photons) and light trapping1-3. In planar LEDs, such as organic LEDs, around 70 to 80 per cent of the light generated from the emitters is trapped in the device4,5, leaving considerable opportunity for improvements in efficiency. Many methods, including the use of diffraction gratings, low-index grids and buckling patterns, have been used to extract the light trapped in LEDs6-9. However, these methods usually involve complicated fabrication processes and can distort the light-output spectrum and directionality6,7. Here we demonstrate efficient and high-brightness electroluminescence from solution-processed perovskites that spontaneously form submicrometre-scale structures, which can efficiently extract light from the device and retain wavelength- and viewing-angle-independent electroluminescence. These perovskites are formed simply by introducing amino-acid additives into the perovskite precursor solutions. Moreover, the additives can effectively passivate perovskite surface defects and reduce nonradiative recombination. Perovskite LEDs with a peak external quantum efficiency of 20.7 per cent (at a current density of 18milliamperes per square centimetre) and an energy-conversion efficiency of 12 per cent (at a high current density of 100milliamperes per square centimetre) can be achieved-values that approach those of the best-performing organic LEDs.

Temperature dependence of electroluminescence (EL) efficiency in blue InGaN-GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with different well widths is systematically investigated. The EL efficiency at 300 K shows a maximum at the input current of 4, 10, and 60 mA for the LEDs with 1.5-, 2.0-, and 2.5-nm QWs, respectively. Nevertheless, the droop behavior at 80 K is mainly dominated by the low hole mobility and near independence on the QW thickness. According to the simulation results, it is found that the distinct efficiency droop behavior for the LEDs with different well widths at high and low temperature is strongly dependent on the effects of electron overflow and nonuniform hole distribution within the MQW region.

The authors found that the electroluminescence (EL) efficiency of organic light-emitting-diodes (LEDs) consisting of triphenyl diamine derivative (TPD) and aluminium quinoline (Alq3) is enhanced by the introduction of a co-evaporated layer of TPD and Alq3 at the interface between the TPD and Alq3 layers. The organic LED with a best co-evaporated layer has two to four times higher EL efficiency (lm W-1) than that without. The highest enhancement was obtained by the introduction of a 20 nm thick co-evaporated layer prepared using the doping ratio of TPD:Alq3 = 1:10. Considering that the photoluminescence efficiency of the co-evaporated layer did not increase, it was concluded that the increase of active sites for carrier transport and recombination due to the enlargement of the effective contact area between TPD and Alq3 causes the improvement of the EL efficiency.

Solution-processed organometallic halide perovskites have obtained rapid development for light-emitting diodes (LEDs) and solar cells (SCs). These devices are fabricated with similar materials and architectures, leading to the emergence of perovskite-based light-emitting solar cells (LESCs). The high quality perovskite layer with reduced nonradiative recombination is crucial for achieving a high performance device, even though the carrier behaviors are fundamentally different in both functions. Here CH3NH3PbBr3 quantum dots (QDs) are first introduced into the antisolvent in solution phase, serving as nucleation centers and inducing the growth of CH3NH3PbI3 films. The heterogeneous nucleation based on high lattice matching and a low free-energy barrier significantly improves the crystallinity of CH3NH3PbI3 films with decreased grain sizes, resulting in longer carrier lifetime and lower trap-state density in the films. Therefore, the LESCs based on the CH3NH3PbI3 films with reduced recombination exhibit improved electroluminescence and external quantum efficiency. The current efficiency is enhanced by 1 order of magnitude as LEDs, and meanwhile the power conversion efficiency increases from 14.49% to 17.10% as SCs, compared to the reference device without QDs. Our study provides a feasible method to grow high quality perovskite films for high performance optoelectronic devices.

Experimental studies have been performed on several aspects of the degradation of electroluminescent quantum efficiency in ZnO-doped GaP light-emitting diodes. The dependence of degradation on stress temperature, stress current (experienced during accelerated aging), and measurement current (at which quantum efficiency is evaluated) has been empirically determined from experiments on several lots of devices. It is shown that degradation is dominated by a decrease in bulk p-side radiative recombination efficiency. The degradation of other factors (such as injection efficiency and injection ratio) contributing to the overall electroluminescent efficiency has only a secondary effect. Moreover, it is shown empirically that the dependences of degradation on temperature and stress current are separable.

An organic light-emitting diode (OLED) with a squarylium dye-doped aluminium quinoline (Alq3) emission layer prepared by vapor deposition method has a pure red emission. However, since its luminance and electroluminescence (EL) efficiency is poor, the authors attended to improve the EL efficiency by doping a photosensitizer dye (a styryl dye, DCM) in an emission layer. The EL efficiency and luminance of DCM- and Sq-doped OLEDs are 2–3 times higher than those of only Sq-doped OLEDs. It was found that the excited energy is transferred from Alq3 to Sq through DCM.

This article presents a study of the possibilities of optimising the electroluminescence (EL) efficiency of dislocation-engineered silicon light-emitting diodes (DELEDs). The diodes were produced by implantation of boron in n-type (100)Si wafers, at a constant ion energy and fluence, of 30 keV and 1×1015 ions/cm2, respectively. The density and the areal coverage by dislocation loops were varied by applying different annealing times in a rapid thermal processing, from 30 s to 60 min. It is shown that the EL efficiency is directly correlated to the number and areal coverage by the loops. The highest population of loops, ∼5×109 /cm2, and an areal coverage of around 50% were achieved for 1–5 min annealing. This loop distribution results in optimal DELEDs, having the highest EL response and the largest increase of EL intensity with operating temperature (80–300 K). The results of this work confirm a previously introduced model of charge-carrier spatial confinement by a local stress induced by the edge of the dislocation loops, preventing carrier diffusion to non-radiative recombination centres and enhancing radiative transitions at the silicon band edge.

Abrupt exciton quenching in blue fluorescent organic light-emitting diodes around turn-on voltage region

The effect of rubidium chloride on properties of organic light-emitting diodes

Organic light-emitting diodes using potassium chloride as efficiency and stability enhancers