Abstract
In this paper, the effect of a body contact (BC) to quench breakdown effects and increase the breakdown voltage in high-electron mobility transistors (HEMTs) is theoretically investigated. The body contact is formed by a highly p-type doped substrate connected to an ohmic back contact. By means of a two-dimensional (2-D) self consistent Monte Carlo simulator we show that the BC prevents holes generated by impact ionization (II) from accumulating in the channel and in the buffer, thus inhibiting the parasitic bipolar effect (PBE). This improves the breakdown behavior and extends the range of the usable drain voltages.
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