Abstract
Growth of 3C-SiC films on an off-axis (111) Si substrate, with a miscut of 4° towards the <110> direction, is here reported. An extensive material characterization has been conducted by means of Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD) and Raman spectroscopy, indicating a very promising film quality with extremely flat surface and interface. Notwithstanding the excellent film quality, the wafer bow is still limiting its full employment in device realization.
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