Abstract
It has been reported that boron segregates to single-crystal layers from silicon during thermal anneals. In this work, we find that boron segregates even more strongly into single-crystal , as has been previously reported for polycrystalline films. This effect is also observed in single-crystal . Segregation coefficients range from 1.7 to 2.9 for annealing temperatures in the 800-850°C range. In a layer with 0.4% carbon, most of the segregation is reversible if the carbon is removed by an oxidation-enhanced out-diffusion process. This argues against the formation of immobile B-C defects as the driving force for the segregation. Gradients of interstitial silicon atoms, created by high concentrations of substitutional carbon, are presented as a driving force capable of causing the segregation seen in the experiments.
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