Blue-shift mechanisms in annealed(Ga,In)(N,As)∕GaAsquantum wells

Abstract

Using a wide range of annealing conditions and a combination of optical and structural characterizations, we have been able to discriminate the different mechanisms at the origin of the (Ga,In)(N,As) quantum well energy blue shift. Indeed, the blue shift observed after low temperature annealing $(<750\phantom{\rule{0.2em}{0ex}}\ifmmode^\circ\else\textdegree\fi{}\mathrm{C})$ is clearly identified to originate mainly from atomic reorganization while the interdiffusion process only occurs after high temperature annealing $(>750\phantom{\rule{0.2em}{0ex}}\ifmmode^\circ\else\textdegree\fi{}\mathrm{C})$. A complete scheme of the blue-shift mechanisms is proposed and supported by the comparison of calculated transition energies with experimental photoluminescence data.