Abstract
We have investigated the influence of substrate temperature during implantation, Timplant, on blister formation in GaAs:N layers produced by N ion implantation followed by rapid thermal annealing. Similar depths of popped blisters (craters) and damage profiles were observed for both low and high Timplant. This is in contrast to reports of Timplant-dependent blister formation in higher-diffusivity systems such as GaAs:H and Si:H. The apparent Timplant-insensitivity of blister formation in GaAs:N is likely due to the lower diffusivity of N in GaAs in comparison to that of H in GaAs and Si.
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