Abstract
Resistive switching (RS) has significant potential for the forthcoming generation in logical and non-volatile memory devices. Owing to their switchable spontaneous polarization ferroelectric materials can be utilized for non-volatile memory applications, e.g., FeRAM, but their destructive readout scheme limits applications. The spontaneous electrical polarization of ferroelectric materials enhances the tuning charge properties at the ferroelectric/metal interface making them appropriate for RS applications. Here, the resistive switching performance of ferroelectric Pb(Zr0.6Ti0.4)O3 (PZT) thin film grown on flexible Ni substrate using pulsed laser deposition were investigated. The PZT film showed both entrenched P-E ferroelectric hysteresis loop and reversible resistive switching behaviors with DC voltage sweep. Bipolar switching between a low resistance state to a high resistance state with a large ON/OFF ratio of 102 and resistance retention potential up to 1010 cycles was observed. The current conduction mechanism can be understood by dual logarithm I-V curve fitting. The obtained results encourage the utilization of prepared Ni/PZT/Pt widget for the non-volatile memory applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
