Abstract
The integration of amorphous zinc tin oxide (ZTO) into crossbar memristor device structures has been investigated where asymmetric devices were fabricated with Al (top) and Pt (bottom) electrodes. The authors found that these devices had reproducible bipolar resistive switching with high switching ratios >104 and long retention times of >104 s. Electrical characterization of the devices suggests that both filamentary and interfacial mechanisms are important for device switching. The authors have used secondary ion mass spectrometry to characterize the devices and found that significant interfacial reactions occur at the Al/ZTO interface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
