Abstract
The effect of applying a positive voltage pulse (Urev = 10–150 V) directly after the negative high power impulse magnetron sputtering (HiPIMS) pulse (bipolar HiPIMS) is investigated for the reactive sputter deposition of TiN thin films. Energy-resolved mass spectroscopy analyses are performed to gain insight in the effect on the ion energy distribution function of the various ions. It is demonstrated that the energy of a large fraction of the ions can be tuned by a reverse target potential and gain energy corresponding to the applied Urev. Microscopy observations and x-ray reflectometry reveal densification of the films which results in an increase in the film hardness from 23.9 to 34 GPa as well as an increase in compressive film stress from 2.1 GPa to 4.7 GPa when comparing conventional HiPIMS with bipolar HiPIMS (Urev = 150 V).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
