Abstract
Far-infrared magnetospectroscopy has been carried out on shallow donor impurities doped in the central region of GaAs quantum wells in $\mathrm{GaAs}\ensuremath{-}{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ multiple-quantum-well structures. Quantum-well widths between 80 and 450 \AA{} were investigated. Results are in very good agreement with recent effective-mass calculations for isolated impurities at the center of GaAs quantum wells.
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