Abstract
By means of a variational scheme and in the effective-mass approximation we have calculated the binding energy of shallow-donor impurities in rectangular-transversal section GaAs–(Ga,Al)As quantum-well wires under an applied electric field. We have considered an infinite confinement model to describe the barriers on the wire boundaries. Depending on the transversal sizes, we can reproduce the results for the infinite quantum wells. We present the results for donor binding energies and polarizabilities of the wires. Our results are in good agreement with previous theoretical findings. This work gives very important information about the binding energy and polarizability that can be taken into account in experimental work related to absorption processes, and carrier dynamics, associated with impurities in these heterostructures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
